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| CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTB772T3/S Features * Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A * Excellent current gain characteristics * Complementary to BTD882T3/S * Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 BBase CCollector EEmitter ECB Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25) Pd(Tc=25) Tj Tstg Limit -40 -30 -5 -3 -7 1 10 150 -55~+150 Unit V V V A A W C C *1 Note : *1. Single Pulse Pw350s, Duty2%. BTB772T3/S CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 52 100 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V A A V V MHz pF Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 2/4 Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE 2 Rank Range Q 100~200 P 160~320 E 250~500 Ordering Information Device BTB772T3 BTB772T3S Package TO-126 TO-126 (Pb-free) Shipping 500 pcs / bag 500 pcs / bag BTB772T3/S CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 VCE=5V Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 3/4 C-E saturation voltage vs Collector current C-E saturation voltage---VCE(SAT)(mV) 10000 Current gain---HFE 1000 100 VCE=2V 100 IC=40IB VCE=1V 10 IC=10IB 1 1 10 100 1000 10000 Collector current---IC(mA) IC=20IB 10 1 10 100 1000 10000 Collector current---IC(mA) B-E saturation voltage vs Collector current 10000 B-E saturation---VBE(SAT)(mV) Power derating curves 12 Power Dissipation---(W) 10 8 6 4 2 0 Ta=25 Tc=25 IC=10IB 1000 100 1 10 100 1000 10000 Collector current---IC(mA) 0 50 100 150 200 Temperature---() BTB772T3/S CYStek Product Specification CYStech Electronics Corp. TO-126 Dimension D A B 123 G C I Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 4/4 E J K M Marking: 3 4 B772 Style: Pin 1.Emitter 2.Collector 3.Base F H L 1 2 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical DIM 1 2 3 4 A B C D E Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB772T3/S CYStek Product Specification |
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